Integrated circuit with anti-punch through control

ABSTRACT

An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

BACKGROUND Technical Field

The present disclosure relates to the field of integrated circuits. Thepresent disclosure relates more particularly to integrated circuitsincluding FinFET transistors.

Description of the Related Art

FinFET transistors typically include doped anti-punch through regions toreduce undesirable short channel effects. However, some undesirabledopants may migrate into the channel region from the anti-punch throughregion. These undesirable dopants in the channel region can adverselyimpact the performance of the transistor. Accordingly, while anti-punchthrough regions are beneficial to the operation of FinFET transistors,traditional anti-punch through regions also have some drawbacks forFinFET performance.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1-17 illustrate cross-sectional views of an integrated circuit dieat successive stages of fabrication, according to one embodiment.

FIG. 18 is a perspective view of an integrated circuit die, according toone embodiment.

FIG. 19 is a method for fabricating an integrated circuit die, accordingto an embodiment.

DETAILED DESCRIPTION

In the following description, many thicknesses and materials aredescribed for various layers and structures within an integrated circuitdie. Specific dimensions and materials are given by way of example forvarious embodiments. Those of skill in the art will recognize, in lightof the present disclosure, that other dimensions and materials can beused in many cases without departing from the scope of the presentdisclosure.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the described subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present description. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various embodiments of thedisclosure. However, one skilled in the art will understand that thedisclosure may be practiced without these specific details. In otherinstances, well-known structures associated with electronic componentsand fabrication techniques have not been described in detail to avoidunnecessarily obscuring the descriptions of the embodiments of thepresent disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising,” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

The use of ordinals such as first, second and third does not necessarilyimply a ranked sense of order, but rather may only distinguish betweenmultiple instances of an act or structure.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment. Thus, the appearances of the phrases “in one embodiment” or“in an embodiment” in various places throughout this specification arenot necessarily all referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

As used in this specification and the appended claims, the singularforms “a,” “an,” and “the” include plural referents unless the contentclearly dictates otherwise. It should also be noted that the term “or”is generally employed in its sense including “and/or” unless the contentclearly dictates otherwise.

FIG. 1 is a cross-sectional view of a portion of an integrated circuitdie 100, according to one embodiment. The integrated circuit die 100 isat an intermediate stage of fabrication. When fabrication of theintegrated circuit die 100 is complete, the integrated circuit die 100will include an array of N-type and P-type FinFET transistors.

The integrated circuit die 100 includes a bulk semiconductor substrate102. The bulk semiconductor substrate 102 can include monocrystallinesilicon. The bulk semiconductor substrate 102 can include semiconductormaterials other than monocrystalline silicon without departing from thescope of the present disclosure.

In one embodiment the integrated circuit die 100 includes a silicon oninsulator (SOI) substrate. In this case, a layer of dielectric material(not shown), such as silicon dioxide, is positioned below thesemiconductor substrate 102. A layer of semiconductor material ispositioned below the layer of dielectric material. This silicon oninsulator configuration is utilized to reduce parasitic capacitances andshort channel effects in transistors. Accordingly, though not explicitlyshown in the Figures, the integrated circuit die 100 can utilize asilicon on insulator substrate.

The integrated circuit die 100 includes a P-well region 104. The P-wellregion 104 is utilized for formation of N-channel transistors. While theFigures illustrate formation of only a single N-channel transistor atthe P-well region 104, those of skill in the art will recognize, inlight of the present disclosure, that the integrated circuit die 100 caninclude a large number of N-channel transistors formed in conjunctionwith the P-well region 104.

The P-well region 104 includes P-type dopant. In an example in which thesemiconductor substrate 102 is monocrystalline silicon, the P-typedopant atoms can include boron atoms. The dopant concentration of theP-well region 104 is between 1E15/cm{circumflex over ( )}3 and1E17/cm{circumflex over ( )}3. The P-well region 104 can include otherdopant concentrations and other types of dopants than those describedherein without departing from the scope of the present disclosure.

In one embodiment, P-well region 104 is part of the semiconductorsubstrate 102. In the example of which the semiconductor substrate 102includes monocrystalline silicon, the P-well region 104 also includesmonocrystalline silicon doped with P-type dopant atoms. The P-wellregion 104 includes the same semiconductor material as the semiconductorsubstrate 102, with the addition of dopant atoms.

The integrated circuit die 100 includes an N-well region 112. The N-wellregion 112 is utilized for formation of P-channel transistors. While theFigures illustrate formation of only a single P-channel transistor atthe N-well region 106, those of skill in the art will recognize, inlight of the present disclosure, that in practice the integrated circuitdie 100 can include a large number of P-channel transistors formed inconjunction with the N-well region 112.

The N-well region 112 includes N-type dopant atoms. In an example inwhich the semiconductor substrate 102 is monocrystalline silicon, theN-type dopant atoms can include Phosphorous atoms. The dopantconcentration of the N-well region 112 is between 1E15/cm{circumflexover ( )}3 and 1E17/cm{circumflex over ( )}3. The N-well region 112 caninclude other dopant concentrations and other types of dopants thanthose described herein without departing from the scope of the presentdisclosure.

In one embodiment, N-well region 112 is part of the semiconductorsubstrate 102. In the example of which the semiconductor substrate 102includes monocrystalline silicon, the N-well region 112 also includesmonocrystalline silicon doped with N-type dopant atoms. The N-wellregion 112 includes the same semiconductor material as the semiconductorsubstrate 102, with the addition of dopant atoms.

The semiconductor substrate 102 is doped with P-type dopant atoms. Forexample, during semiconductor substrate 102 can be doped with P-typedopant atoms in-situ during growth of the semiconductor substrate 102.In this case, the P-well region 104 can include all of the semiconductorsubstrate 102 down to the dielectric layer of the SOI configuration. TheN-well region 112 can be formed during a separate doping process inwhich N-type dopant ions are implanted in the semiconductor substrate112 at a selected depth with a selected concentration.

The integrated circuit die 100 includes an anti-punch through region 106formed above or in the P-well region 104. The anti-punch through region106 helps to reduce a drain-induced barrier lowering (DIBL) effect. Asthe channel length of FinFET transistors decreases, DIBL increases. DIBLcan result in short circuits between the source and drain of the FinFETtransistors. The presence of the anti-punch through region 106 helps toreduce DIBL and the corresponding short circuits between the source anddrain of the FinFET transistors.

The anti-punch through region 106 is a P-type anti-punch through regionfor reducing punch through in N-channel transistors. The P-typeanti-punch through region 106 can be formed by doping the selected areawith P-type dopant including boron (B) and/or boron fluorine (BF2). TheP-type dopant can be implanted during an ion implantation process with apower range from about 3 keV to about 7 keV. Alternatively, the P-typedopant can be implanted in situ during an epitaxial growth of the regionof the semiconductor substrate 102 corresponding to the anti-punchthrough region 106. Other types of dopant, and other doping processescan be utilized to form the anti-punch through region 106 withoutdeparting from the scope of the present disclosure.

In one embodiment, a barrier layer can be formed on top of theanti-punch through region 106 to inhibit diffusion of the anti-punchthrough region 106 into a channel region 108. The barrier layer caninclude silicon carbide or other suitable periods.

The integrated circuit die 100 includes an anti-punch through region 114formed above or in the N-well region 112. The anti-punch through region114 helps to reduce drain-induced barrier lowering (DIBL) effect, asdescribed previously.

The anti-punch through region 114 is an N-type anti-punch through regionfor reducing DIBL for P-channel transistors. The N-type anti-punchthrough region 114 can be formed by doping the selected area with N-typedopant including arsenic (As), phosphorus (P), or antimony (Sb). Thedoping process can also result in the presence of hydrogen H in theanti-punch through region 114. The N-type dopant can be implanted duringan ion implantation process with a power range from about 3 keV to about7 keV. Alternatively, the N-type dopant can be implanted in situ duringan epitaxial growth of the region of the semiconductor substrate 102corresponding to the anti-punch through region 114. Other types ofdopant, and other dopant processes can be utilized to form theanti-punch through region 114 without departing from the scope of thepresent disclosure.

In one embodiment, a barrier layer can be formed on top of theanti-punch through region 114 to inhibit diffusion of the anti-punchthrough region 106 into a channel region 116. The barrier layer caninclude silicon carbide or other suitable materials.

The integrated circuit die 100 includes a channel region 108. Thechannel region 108 includes a monocrystalline semiconductor material.The monocrystalline semiconductor material can include monocrystallinesilicon. Alternatively, the channel region 108 can include amonocrystalline semiconductor material other than silicon withoutdeparting the scope of the present disclosure. Additionally, the channelregion 108 can include a different monocrystalline semiconductormaterial than the anti-punch through region 106. The channel region 108will correspond to the channel region of N-channel transistors formed inconjunction with P-well region 104, as will be described in more detailbelow.

The channel region 108 can be formed via an epitaxial growth afterformation of the anti-punch through region 106. Alternatively, thechannel region one can be formed in a same epitaxial growth process asthe anti-punch through region 106 but without the dopant of theanti-punch through region 106.

The integrated circuit die 100 includes a channel region 116. Thechannel region 116 includes a monocrystalline semiconductor material.The monocrystalline semiconductor material can include monocrystallinesilicon. Alternatively, the channel region 116 can include amonocrystalline semiconductor material other than silicon withoutdeparting the scope of the present disclosure. Additionally, the channelregion 116 can include a different monocrystalline semiconductormaterial than the anti-punch through region 114. The channel region 116will correspond to the channel region of P-channel transistors formed inconjunction with the N-well region 112.

The channel region 116 can be formed via an epitaxial growth afterformation of the anti-punch through region 108. Alternatively, thechannel region one can be formed in a same epitaxial growth process asthe anti-punch through region 108 but without the dopant of theanti-punch through region 108.

The integrated circuit die 100 includes trench isolation region 110. Thetrench isolation region 110 electrically isolates the N-well region 112from the P-well region 104. Additionally or alternatively, the trenchisolation 110 can separate N-channel transistors regions from P-channeltransistors regions. The trench isolation region 110 can extend to adepth below the N-well 112. In one embodiment, the trench isolationregion 110 can extend all the way to an insulator layer of the siliconon insulator substrate. The trench isolation region 110 can includesilicon dioxide. The trench isolation region 110 can include othermaterials, shapes, and dimensions without departing from the scope ofthe present disclosure.

The integrated circuit die 100 includes a gate dielectric layer 118positioned on the channel region 108. The gate dielectric layer 118 caninclude dielectric materials such as silicon oxide, silicon nitride,silicon oxynitride, dielectric materials with high dielectric constants(high-K dielectric materials), or combinations thereof. High-Kdielectric materials include hafnium oxide, zirconium oxide, aluminumoxide, hafnium dioxide-alumina alloy, hafnium silicon oxide, hafniumsilicon oxynitride, hafnium tantalum oxide, hafnium titanium oxide,hafnium zirconium oxide. Other suitable dielectric materials for thegate dielectric 118 can be utilized without departing the scope of thepresent disclosure.

The integrated circuit die 100 includes a gate electrode 120. The gateelectrode 120 may include polysilicon or metal. Metals for the gateelectrode 120 can include tantalum nitride, nickel silicon, cobaltsilicon, molybdenum, copper, tungsten, alumina, cobalt, zirconium,platinum, or other suitable materials. Other materials can be used forthe gate electrode 120 without departing from the scope of the presentdisclosure.

The integrated circuit die 100 includes a hard mask layer 126 positionedon the gate electrode 120. The hard mask layer 126 can include siliconoxide, silicon nitride, or silicon oxynitride. Other materials can beused for the hard mask layer 126 without departing from the scope of thepresent disclosure. The hard mask layer 126 is utilized to pattern thegate electrode 120 during processing steps leading to the integratedcircuit die 100 as shown in FIG. 1.

The integrated circuit die 100 includes a gate dielectric layer 122positioned on the channel region 108. The gate dielectric layer 122 caninclude dielectric materials such as silicon oxide, silicon nitride,silicon oxynitride, dielectric materials with high dielectric constants(high-K dielectric materials), or combinations thereof. High-Kdielectric materials include hafnium oxide, zirconium oxide, aluminumoxide, hafnium dioxide-alumina alloy, hafnium silicon oxide, hafniumsilicon oxynitride, hafnium tantalum oxide, hafnium titanium oxide,hafnium zirconium oxide. Other suitable dielectric materials for thegate dielectric 122 can be utilized without departing the scope of thepresent disclosure.

The integrated circuit die 100 includes a gate electrode 124. The gateelectrode 124 may include polysilicon or metal. Metals for the gateelectrode 124 can include tantalum nitride, nickel silicon, cobaltsilicon, molybdenum, copper, tungsten, alumina, cobalt, zirconium,platinum, or other suitable materials. Other materials can be used forthe gate electrode 124 without departing from the scope of the presentdisclosure.

The integrated circuit die 100 includes a hard mask layer 128 positionedon the gate electrode 124. The hard mask layer 128 can include siliconoxide, silicon nitride, or silicon oxynitride. Other materials can beused for the hard mask layer 128 without departing from the scope of thepresent disclosure. The hard mask layer 128 is utilized to pattern thegate electrode 124 during processing steps leading to the integratedcircuit die 100 as shown in FIG. 1.

The integrated circuit die includes spacer layers 130, 132, and 134. Thespacer layers 130, 132, 134 are dielectric layers for forming sidewallspacers for the gate electrodes 120, 124, as will be described in moredetail below. The spacer layers 130, 132, 134 can include silicon oxide,silicon nitride, and silicon oxynitride. The spacer layers can includemore or fewer than three layers and can include other materials withoutdeparting from the scope of the present disclosure.

Though not apparent in FIG. 1, the channel regions 108, 116 and theanti-punch through regions 106, 114 can be formed in a semiconductor finthat protrudes from the semiconductor substrate 102. The semiconductorfin is more apparent in the perspective view of FIG. 18.

FIG. 2 is a cross-section of the integrated circuit die 100 at anintermediate stage of processing, according to one embodiment. In FIG.2, a mask 138 is formed on top of the top spacer layer 134 over theportion of the integrated circuit die 100 corresponding to the P-channelFinFET transistors. The mask 138 can be formed using commonphotolithography techniques including depositing a layer of photoresist,exposing the photoresist to light in the presence of a photolithographymask, and removing non-hardened portions of the photoresist. Othersuitable processes and materials can be used to form the mask 138without departing from the scope of the present disclosure.

A sidewall spacer 136 is formed on sidewalls of the gate electrode 120.The sidewall spacer is formed by etching the exposed portions of thespacer layers 130, 132, and 134. The etching process completely removesthe spacer layers 130, 132, and 134 at those exposed locations where thespacer layers 130, 132, 134 were thinnest in the vertical direction. Thespacer layers 130, 132, and 134 are not etched directly below the mask138.

The sidewall spacer 136 is formed by using an anisotropic etchingprocess. The anisotropic etching process selectively etches in thedownward direction. The result is that the spacer layers are notsignificantly etched from the sidewalls of the gate electrode becausethe spacer layers 130, 132, and 134 are vertically thick along thesidewalls of the gate electrode 120. Accordingly, after the etchingprocess, the sidewall spacers 136 remain as shown in FIG. 2.

A gate stack 137 includes the gate dielectric 118, the gate electrode120, the hard mask 126, and the sidewall spacer 136. The gate stack 137wraps around a semiconductor fin, as shown in more detail in relation toFIG. 18.

FIG. 3 is a cross-section of the integrated circuit die 100 at anintermediate stage of processing, according to one embodiment. In FIG.3, source and drain recesses 140 are formed in the semiconductormaterial in the P-well region 104, the anti-punch through region 106,and the channel region 108. As will be described in more detail below,the source and drain recesses 140 will be utilized to form source anddrain regions for an N-channel FinFET transistor.

The etching process for forming the source and drain recesses 140selectively etches the semiconductor material associated with thevarious semiconductor regions 104, 106, 108 with respect to the trenchisolation region 110, sidewall spacer 136, the hard mask 126, and themask 138. In other words, the etching process etches the semiconductormaterial associated with the channel region 108, the anti-punch throughregion 106, and the P-well region 104 at a significantly higher ratethan the materials of the sidewall spacer 136, the hard mask 126, andthe mask 138. The etching process can include a wet etch or dry etch.Accordingly, the chemistry of the etchant selectively etches thesemiconductor material of the various semiconductor regions 104, 106,108.

In one embodiment, the etching process for forming the source and drainrecesses 140 is an isotropic etch. The isotropic etch etches in alldirections substantially at the same rate. Accordingly, the bottom ofthe recesses 140 will have a semicircular shape. Alternatively, theetching process for forming the source and drain recesses 140 caninclude an anisotropic etch that selectively etches in the downwarddirection a significantly higher rate than in other directions. In thiscase, the recesses 140 would have substantially vertical walls and asubstantially flat bottom. The etching process for forming the sourceand drain recesses can include one or more of a wet etch, a dry etch, orion beam etching. Those of skill in the art will recognize, in light ofwill recognize, in light of present disclosure, that other etchingprocesses can be utilized without departing from the scope of thepresent disclosure.

In one embodiment, the recesses 140 do not extend below the anti-punchthrough region 106. In this case, the anti-punch through region 106entirely separates the recesses 140 from the P-well region 104.

FIG. 4 is a cross-section of the integrated circuit die 100 at anintermediate stage of processing, according to one embodiment. In FIG.4, the mask 138 has been removed and a layer of dielectric material 142is deposited on the exposed surfaces of the integrated circuit die 100,including the exposed walls 141 of the source and drain recesses 140. Aswill be set forth in more detail below, the layer of dielectric material142 will assist in improving the performance and characteristics of theN-channel transistor associated with the P-well region 104.

In one embodiment, the layer of dielectric material 142 includes silicondioxide. The layer of dielectric material 142 is between 3 nm and 30 nmin thickness. The layer of dielectric material 142 can be deposited bychemical vapor deposition, physical vapor deposition, or atomic layerdeposition. Other suitable materials, thicknesses, and depositionprocesses can be used for the layer of dielectric material 142 withoutdeparting from the scope of the present disclosure.

FIG. 5 is a cross section of a portion of the integrated circuit die 100during an intermediate stage of processing, according to one embodiment.In particular, FIG. 5 is an enlarged view of a portion of the integratedcircuit die 100 including source/drain recesses 140, the layer ofdielectric material 142 is positioned on a sidewall 141 of the recess140 and the anti-punch through region 106.

As was described previously in relation to FIG. 1, the anti-punchthrough region 106 is formed by implanting or diffusing dopant. Thedoping process can include implanting boron and boron fluorine into theanti-punch through region 106. After or during implantation, some of theboron and fluorine atoms separate. The result is that there are free,fluorine ions (F−) and boron ions (B+) in the anti-punch through region106.

While the anti-punch through region 106 serves a useful function ininhibiting the DIBL effect and the accompanying short-circuits betweenthe source and drain, the presence of the free fluorine ions can alsohave negative effects. For example, some of the free fluorine ions maygradually diffuse into the channel region 108. The diffusion of thefluorine ions into the channel region 108 can cause significant problemsfor the functionality of the N-channel transistors. As the concentrationof fluorine ions in the channel region 108 increases, the conductivityof the channel region 108 decreases. If the concentration of fluorineions in the channel region 108 is too high, then it is possible that theN-channel transistor will not conduct enough current for proper functionduring channel inversion. As will be described in more detail below, thedeposition of the layer of dielectric material 142 can assist inreducing the concentration of fluorine atoms in the anti-punch throughregion 106, thereby decreasing the number of fluorine ions that candiffuse into the channel region 108.

FIG. 6 is a cross-section of a portion of the integrated circuit die 100during an intermediate stage of processing, according to one embodiment.In particular, the view of FIG. 6 is the same enlarged portion of theintegrated circuit die 100 as was shown in FIG. 5. However, FIG. 6 showsthe integrated circuit die 100 after an annealing process has beenperformed.

During the annealing process, some of the fluorine ions migrate from theanti-punch through region 106 into the layer of dielectric material 142.In the example in which the layer of dielectric material 142 includessilicon oxide, some of these fluorine ions bond with silicon atoms inthe layer of dielectric material 142 to form silicon fluorine (SiF). Theresult is that the concentration of fluorine in the anti-punch throughregion 106 is reduced. Correspondingly, the concentration of fluorine inthe layer of dielectric material 142 is increased.

The annealing process can include a rapid thermal annealing process. Therapid thermal annealing process can include heating the integratedcircuit die 100 to a high temperature between 700° C. and 1200° C. Theintegrated circuit die 100 is subjected to the high temperature for aduration of time between 5 seconds and 20 seconds. The annealing processcan include other temperatures and durations of time without departingfrom the scope of the present disclosure. For example, in some cases,the annealing process can last several minutes. The result of theannealing process is the diffusion of fluorine ions into the layer ofdielectric material 142.

FIG. 7 is a cross-section of a portion of the integrated circuit die 100during an intermediate stage of processing, according to one embodiment.In particular, the view of FIG. 7 is the same enlarged portion of theintegrated circuit die 100 as is shown in FIG. 6. However, in FIG. 7,the layer of dielectric material 142 has been removed.

The layer of dielectric material 142 can be removed by an etchingprocess. The etching process can include a wet etch or a dry etch. Theetching process utilizes an etchant with a chemistry that selectivelyetches the layer of dielectric material 142 with respect to thesemiconductor material of the channel region 108, the anti-punch throughregion 106, and the P-well region 104. The etching process can includean isotropic etching process that etches the layer of dielectricmaterial 142 at a substantially similar rate for all directions. Theetching process can include a timed etch. The duration of the etch isselected to be sufficient to remove the entire layer of dielectricmaterial 142. The duration of the etch is selected to be sufficientlyshort so that the semiconductor material of the channel region 108, theanti-punch through region 106, and the P-well region 104 are not etchedto a significant degree. For example, the etching process may removebetween 2 Å and 10 Å of semiconductor material. Accordingly, the widthof the recesses 140 is not substantially increased after the etchingprocess that removes the layer of dielectric material 142.

When the layer of dielectric material 142 is removed, all the fluorineatoms that migrated into the layer of dielectric material 142 are alsoremoved. Accordingly, a large number of fluorine atoms is removed withthe removal of the layer of dielectric material 142. In one example, theconcentration of fluorine atoms in the anti-punch through region 106prior to deposition of the layer of dielectric material 142 is between1E4/cm{circumflex over ( )}3 and 1E5/cm{circumflex over ( )}3. Theconcentration of fluorine atoms in the anti-punch through region 106after removal of the layer of dielectric material 142 is between1E2/cm{circumflex over ( )}3 and 1E3/cm{circumflex over ( )}3.Accordingly, in one embodiment, the concentration of fluorine atoms inthe anti-punch through region 106 after the removal of the layer ofdielectric material 142 is less than 1E4/cm{circumflex over ( )}3. Inone embodiment, the concentration of fluorine atoms in the anti-punchthrough region 106 after removal of the layer of dielectric material 142is less than 1E3/cm{circumflex over ( )}3. On the other hand, thedeposition of the layer of dielectric material 142, the annealingprocess, and the removal of the layer of dielectric material 142 doesnot adversely impact the concentration of desirable boron atoms in theanti-punch through region 106. Thus, the deposition of the layer ofdielectric material 142, the annealing process, and the removal of thelayer of dielectric material 142 removes unwanted dopants withoutadversely impacting the concentration of desired dopants.

The description of FIGS. 5-7 has primarily discussed an embodiment inwhich the anti-punch through region 106 includes boron and fluorineatoms. However, the anti-punch through region 106 can include othertypes of dopants, including other types of desirable dopants andundesirable dopants without departing from the scope of the presentdisclosure. The deposition of the layer of dielectric material 142, theannealing process, and the removal of the layer of dielectric material142 can remove other types of undesirable dopants other than thosespecifically described above.

FIG. 8 is a cross section of a portion of the integrated circuit die 100during an intermediate stage of processing, according to one embodiment.In FIG. 8, a source region 144 and a drain region 146 have been formedin the recesses 140.

The source and drain regions 144, 146 include a semiconductor material.The semiconductor material of the source and drain regions 144, 146 isheavily doped with an N-type dopant. In one example, the semiconductormaterial includes monocrystalline silicon and the dopant includesphosphorus. Other semiconductor materials and dopants can be used forthe source and drain regions 144, 146 without departing from the scopeof the present disclosure.

The source and drain regions 144, 146 can be formed by an epitaxialgrowth. Accordingly, the monocrystalline semiconductor material isepitaxially grown from the P-well region 104, the anti-punch throughregion 106, and the channel region 108. The N-type dopants can beimplanted in situ during the epitaxial growth. Other processes forforming the source and drain regions 144, 146 and for implanting N-typedopants in the source and drain regions 144, 146 can be utilized withoutdeparting from the scope of the present disclosure. Those of skill inthe art will recognize, in light of the present disclosure, that manyalternative or additional processes can be utilized to form the variousfeatures of an N-channel FinFET transistor without departing from thescope of the present disclosure.

Another benefit of the annealing and removal of the layer of dielectricmaterial 142 is that the sidewalls 141 of the recess 140 aresignificantly smoother after removal of the layer of dielectric material142. This provides an additional benefit that boron atoms, or otherP-type dopants are not lost at the surface of the recesses 140. When thesource and drain regions 144, 146 are formed in the recesses 140, theinterface between the anti-punch through region 106 and the source anddrain regions 144, 146 will, thus, include an improved P-N interfacethat reduces leakage current between the anti-punch through region 106and the source and drain regions 144, 146. In one example, the maximumpeak to valley roughness between the interfaces of the source/drainregions 144, 146 and the anti-punch through region 106 is between 0.2 nm1 nm. Accordingly, the maximum peak to valley roughness can be less than1 nm, or less than 0.4 nm. The smoother interface results in smallerleakage currents between the source and drain regions 144, 146 and theP-well region 104 via the anti-punch through region 106.

FIG. 9 is a cross section of a portion of the integrated circuit die 100during an intermediate stage of processing, according to one embodiment.In FIG. 9, a layer of dielectric material 148 has been deposited on theintegrated circuit die 100. The layer of dielectric material 148 caninclude silicon nitride. Other dielectric materials can be used for thelayer of dielectric material 148 without departing from the scope of thepresent disclosure.

FIG. 9 is a cross-section of a portion of the integrated circuit die 100during an intermediate stage of processing, according to one embodiment.In FIG. 9, a dielectric layer 150 is deposited in the recesses 144 inthe dielectric layer 106 and on the second sidewall spacer 148. Thedielectric layer 152 is deposited on the dielectric layer 150.

FIG. 10 is a cross-section of the integrated circuit die 100 at anintermediate stage of processing, according to one embodiment. In FIG.10, a mask 150 is formed on top of the layer of dielectric material 148over the portion of the integrated circuit die 100 corresponding to theP-channel FinFET transistor. The mask 150 can be formed using commonphotolithography techniques including depositing a layer of photoresist,exposing the photoresist to light in the presence of a photolithographymask, and removing non-hardened portions of the photoresist. Othersuitable processes and materials can be used to form the mask 150without departing from the scope of the present disclosure.

A sidewall spacer 152 is formed on sidewalls of the gate electrode 124.The sidewall spacer 152 is formed by etching the exposed portions of thespacer layers 130, 132, and 134 and the layer of dielectric material148. The etching process completely removes the spacer layers 130, 132,and 134 and the layer of dielectric material 148 at those exposedlocations where the spacer layers 130, 32, 134 and the layer ofdielectric material were thinnest in the vertical direction.

The sidewall spacer 152 is formed by using an anisotropic etchingprocess. The anisotropic etching process selectively etches in thedownward direction. The result is that the spacer layers are notsignificantly etched from the sidewalls of the gate electrode becausethe spacer layers 130, 132, and 134 are vertically thick along thesidewalls of the gate electrode 124. Accordingly, after the etchingprocess, the sidewall spacers 152 remain as shown in FIG. 10.

A gate stack 153 includes the gate dielectric 122, the gate electrode124, the hard mask 128, and the sidewall spacer 152. The gate stack 153wraps around a semiconductor fin, as shown in more detail in relation toFIG. 18.

FIG. 11 is a cross-section of the integrated circuit die 100 at anintermediate stage of processing, according to one embodiment. In FIG.11, source and drain recesses 154 are formed in the semiconductormaterial in the N-well region 112, the anti-punch through region 114,and the channel region 116. As will be described in more detail below,the source and drain recesses 154 will be utilized to form source ofdrain regions for a P-channel FinFET transistor.

The etching process for forming the source and drain recesses 154selectively etches the semiconductor material associated with thevarious semiconductor regions 112, 114, 116 with respect to the trenchisolation region 110, sidewall spacer 152, the hard mask 128, and themask 150. In other words, the etching process etches the semiconductormaterial associated with the channel region 116, the anti-punch throughregion 114, and the N-well region 112 at a significantly higher ratethan the materials of the sidewall spacer 152, the hard mask 128, andthe mask 150. The etching process can include a wet etch or dry etch.Accordingly, the chemistry of the etchant selectively etches thesemiconductor material of the various semiconductor regions 112, 114,116.

The etching process for forming the source and drain recesses 154 is anisotropic etch. The isotropic etch etches in all directionssubstantially at the same rate. Accordingly, the bottom of the recesses154 will have a semicircular shape. Alternatively, the etching processfor forming the source and drain recesses 154 can include an anisotropicetch that selectively etches in the downward direction a significantlyhigher rate than in other directions. In this case, the recesses 154would have substantially vertical walls and a substantially flat bottom.The etching process for forming the source and drain recesses caninclude one or more of a wet etch, a dry etch, or ion beam etching.Those of skill in the art will recognize, in light of will recognize, inlight of present disclosure, that other etching processes can beutilized without departing from the scope of the present disclosure.

FIG. 12 is a cross-section of the integrated circuit die 100 at anintermediate stage of processing, according to one embodiment. In FIG.12, the mask 150 has been removed and a layer of dielectric material 158is deposited on the exposed surfaces of the integrated circuit die 100,including the exposed sidewalls 155 of the source and drain recesses154. As will be set forth in more detail below, the layer of dielectricmaterial 158 will assist in improving the performance andcharacteristics of the P-channel transistor associated with the N-wellregion 112.

In one embodiment, the layer of dielectric material 158 includes silicondioxide. The layer of dielectric material 158 is between 3 nm and 30 nmin thickness. The layer of dielectric material 158 can be deposited bychemical vapor deposition, physical vapor deposition, or atomic layerdeposition. Other suitable materials, thicknesses, and depositionprocesses can be used for the layer of dielectric material 158 withoutdeparting from the scope of the present disclosure.

FIG. 13 is a cross section of a portion of the integrated circuit die100 during an intermediate stage of processing, according to oneembodiment. In particular, FIG. 13 is an enlarged view of a portion ofthe integrated circuit die 100 including source/drain recesses 154, thelayer of dielectric material 158 on a sidewall 155 of the recess 154,and the anti-punch through region 114.

As was described previously in relation to FIG. 1, the anti-punchthrough region 114 is formed by implanting or diffusing dopant. Thedoping process can include implanting phosphorus and phosphorus hydrogeninto the anti-punch through region 114. After or during implantation,some of the phosphorus and hydrogen atoms separate. The result is thatthere are free, hydrogen ions (H+) and free phosphorus ions (P−) in theanti-punch through region 114.

While the anti-punch through region 114 serves a useful function ininhibiting the DIBL effect and accompanying short-circuits between thesource and drain, the presence of the free hydrogen ions can also havenegative effects. For example, some of the free hydrogen ions maygradually diffuse into the channel region 116. The diffusion of thehydrogen ions into the channel region 116 can cause significant problemsfor the functionality of the P-channel transistor. As the concentrationof hydrogen ions in the channel region 116 increases, the conductivityof the channel region 116 decreases. If the concentration of hydrogenions in the channel region 116 is too high, then it is possible that theP-channel transistor will not conduct enough current for proper functionduring channel inversion. As will be described in more detail below, thedeposition of the layer of dielectric material 158 can assist inreducing the concentration of hydrogen atoms in the anti-punch throughregion 114, thereby decreasing the number of hydrogen ions that candiffuse into the channel region 116.

FIG. 14 is a cross-section of a portion of the integrated circuit die100 during an intermediate stage of processing, according to oneembodiment. In particular, the view of FIG. 14 is the same enlargedportion of the integrated circuit die 100 as was shown in FIG. 13.However, FIG. 14 shows the integrated circuit die 100 after an annealingprocess has been performed.

During the annealing process, some of the hydrogen ions migrate from theanti-punch through region 114 into the layer of dielectric material 158.In the example in which the layer of dielectric material 158 includessilicon oxide, some of these hydrogen ions bond with silicon atoms inthe layer of dielectric material 158 to form hydrogen oxide (HOH). Theresult is that the concentration of hydrogen in the anti-punch throughregion 114 is reduced. Correspondingly, the concentration of hydrogen inthe layer of dielectric material 158 is increased.

The annealing process can include a rapid thermal annealing process. Therapid thermal annealing process can include heating the integratedcircuit die 100 to a high temperature between 700° C. and 1200° C. Theintegrated circuit die 100 is subjected to the high temperature for aduration of time between 5 seconds and 20 seconds. The annealing processcan include other temperatures and durations of time without departingfrom the scope of the present disclosure. For example, in some cases,the annealing process can last up to several minutes. The result of theannealing process is the diffusion of hydrogen ions into the layer ofdielectric material 158.

FIG. 15 is a cross-section of a portion of the integrated circuit die100 during an intermediate stage of processing, according to oneembodiment. In particular, the view of FIG. 15 is the same enlargedportion of the integrated circuit die 100 as is shown in FIG. 14.However, in FIG. 15, the layer of dielectric material 158 has beenremoved.

The layer of dielectric material 158 can be removed by an etchingprocess. The etching process can include a wet etch or a dry etch. Theetching process utilizes an etchant with a chemistry that selectivelyetches the layer of dielectric material 158 with respect to thesemiconductor material of the channel region 116, the anti-punch throughregion 114, and the N-well region 112. The etching process can includean isotropic etching process that etches the layer of dielectricmaterial 158 at a substantially similar rate for all directions. Theetching process can include a timed etch. The duration of the etch isselected to be sufficient to remove the entire layer of dielectricmaterial 158. The duration of the etch is selected to be sufficientlyshort so that the semiconductor material of the channel region 116, theanti-punch through region 114, and the N-well region 112 are not etchedto a significant degree. For example, the etching process may removebetween 2 Å and 10 Å of semiconductor material. Accordingly, the widthof the recesses 154 is not substantially increased after the etchingprocess that removes the layer of dielectric material 158.

When the layer of dielectric material 158 is removed, all the hydrogenatoms that migrated into the layer of dielectric material 158 are alsoremoved. Accordingly, a large number of hydrogen atoms is removed withthe removal of the layer of dielectric material 158. In one example, theconcentration of hydrogen atoms in the anti-punch through region 114prior to deposition of the layer of dielectric material 158 is between1E4/cm{circumflex over ( )}3 and 1E5/cm{circumflex over ( )}3. Theconcentration of hydrogen atoms in the anti-punch through region 114after removal of the layer of dielectric material 158 is between1E2/cm{circumflex over ( )}3 and 1E3/cm{circumflex over ( )}3.Accordingly, in one embodiment, the concentration of hydrogen atoms inthe anti-punch through region 114 after the removal of the layer ofdielectric material 158 is less than 1E4/cm{circumflex over ( )}3. Inone embodiment, the concentration of hydrogen atoms in the anti-punchthrough region 114 after removal of the layer of dielectric material 158is less than 1E3/cm{circumflex over ( )}3. On the other hand, thedeposition of the layer of dielectric material 158, the annealingprocess, and the removal of the layer of dielectric material 158 doesnot adversely impact the concentration of desirable phosphorus atoms inthe anti-punch through region 114. Thus, the deposition of the layer ofdielectric material 158, the annealing process, and the removal of thelayer of dielectric material 158 removes unwanted dopant atoms withoutadversely impacting the concentration of desired dopant atoms.

The description of FIGS. 13-15 has primarily discussed an embodiment inwhich the anti-punch through region includes phosphorus and hydrogenatoms. However, the anti-punch through region 114 can include othertypes of dopants, including other types of desirable dopants andundesirable dopants without departing from the scope of the presentdisclosure. For example, undesirable carbon atoms can be diffused intothe layer of dielectric material 158 and removed. The deposition of thelayer of dielectric material 158, the annealing process, and the removalof the layer of dielectric material 158 can remove other types ofundesirable dopants other than those specifically described above.

FIG. 16 is a cross section of a portion of the integrated circuit die100 during an intermediate stage of processing, according to oneembodiment. In FIG. 16, a source region 160 and a drain region 162 havebeen formed in the recesses 154.

The source and drain regions 160, 162 include a semiconductor material.The semiconductor material of the source and drain regions 160, 162 isheavily doped with a P-type dopant. In one example, the semiconductormaterial includes monocrystalline silicon and the dopant includes boron.In another example, the semiconductor material includes silicongermanium (SiGe) and the dopant includes boron. Other semiconductormaterials and dopants can be used for the source and drain regions 160,162 without departing from the scope of the present disclosure.

The source and drain regions 160, 162 can be formed by an epitaxialgrowth. Accordingly, the monocrystalline semiconductor material isepitaxially grown from the N-well region 112, the anti-punch throughregion 114, and the channel region 116. The P-type dopants can beimplanted in situ during the epitaxial growth. Other processes forforming the source and drain regions 160, 162 and for implanting P-typedopants in the source and drain regions 160, 162 can be utilized withoutdeparting from the scope of the present disclosure. Those of skill inthe art will recognize, in light of the present disclosure, that manyalternative or additional processes can be utilized to form the variousfeatures of a P-channel FinFET transistor without departing from thescope of the present disclosure.

Another benefit of the annealing and removal of the layer of dielectricmaterial 158 is that the sidewalls of the recess 154 are significantlysmoother after removal of the layer of dielectric material 158. Thisprovides an additional benefit that phosphorus atoms, or other N-typedopants are not lost at the surface of the recesses 154. When the sourceand drain regions 160, 162 are formed in the recesses 154, the interfacebetween the anti-punch through region 114 and the source and drainregions 160, 162 will, thus, include an improved P-N interface thatreduces leakage current between the anti-punch through region 114 andthe source and drain regions 160, 162. In one example, the maximum peakto valley roughness between the interfaces of the source/drain regions160, 162 and the anti-punch through region 114 is between 0.2 nm 1 nm.Accordingly, the maximum peak to valley roughness can be less than 1 nm,or less than 0.4 nm. The smoother interface results in smaller leakagecurrents between the source and drain regions 160, 162 and the N-wellregion 112 via the anti-punch through region 114.

FIG. 17 is a cross section of a portion of the integrated circuit die100 during an intermediate stage of processing, according to oneembodiment. In FIG. 17 the layer of dielectric material 148 has beenremoved. FIG. 17 shows the N-channel FinFET transistor 164 and theP-channel FinFET transistor 166. In practice, the integrated circuit die100 can include a large number of N-channel FinFET transistors 164 andP-channel FinFET transistors 166. FIG. 17 does not illustrate source anddrain contacts or other common integrated circuit structures. Those ofskill in the art will recognize, in light of the present disclosure thatthe integrated circuit die 100 will include many other structures andfeatures without departing from the scope of the present disclosure.

FIG. 18 is a perspective view of a portion of the integrated circuit dieof FIG. 17, according to one embodiment. The perspective view of FIG. 17illustrates a semiconductor fin 172 protruding from the semiconductorsubstrate 102. The source and drain regions 144, 146, the channel region108, and a portion of the anti-punch through region 106 are positionedin the semiconductor fin 172. The gate stack 137 is wrapped around thesemiconductor fin 172. Accordingly, the gate electrode 120 and the gatedielectric 118 are wrapped around the channel region 108, enabling thegate electrode to more effectively render the channel region 108conducting or nonconducting when selected voltages are applied to thegate electrode 120. Though not shown in FIG. 18, one or more dielectriclayers may be positioned on either side of the semiconductor fin 172.The one or more dielectric layers may be present during formation of thesource and drain regions 144, 146, 160, 162.

The source and drain regions 160, 162, the channel region 116, and aportion of the anti-punch through region 114 are positioned in thesemiconductor fin 172. The gate stack 153 is wrapped around thesemiconductor fin 172. Accordingly, the gate electrode 124 and the gateoxide 122 are wrapped around the channel region 116, enabling the gateelectrode to more effectively render the channel region 116 conductingor nonconducting when selected voltages are applied to the gateelectrode 124.

In FIG. 18 the anti-punch through regions 106, 114 extend below thesemiconductor fin 144 and the corresponding source and drain regions144, 146, 160, 162. However, in some embodiments, the anti-punch throughregions may not extend below the semiconductor fin 172. In these cases,the N-well and P-well regions 104, 112 may extend into the semiconductorfin 172. Those of skill in the art will recognize, in light of thepresent disclosure, that the integrated circuit die 100 may have variousconfigurations and elements not differing from those shown in theFigures without departing from the scope of the present disclosure.

As described herein, the semiconductor fin 172 may include a single typeof semiconductor material including various doped regions.Alternatively, the semiconductor fin may include multiple semiconductormaterials and various doped regions.

FIG. 19 is a method 1900 for fabricating an integrated circuit die,according to an embodiment. At 1902, the method 1900 includes forming asemiconductor fin including a channel region and an anti-punch throughregion. One example of a semiconductor fin is the semiconductor fin 172of FIG. 18. One example of a channel region is the channel region 108 ofFIG. 1. One example of an anti-punch through region is the anti-punchthrough region 106 of FIG. 1. At 1904, the method 1900 includes forminga recess in the fin, the recess having a sidewall abutting theanti-punch through region. One example of a recess is the recess 140 ofFIG. 3. At 1906, the method 1900 includes depositing a layer ofdielectric material on the sidewall of the recess. One example of alayer of dielectric material is the layer of dielectric material 142 ofFIG. 4. At 1908, the method 1900 includes performing an annealingprocess while the layer of dielectric material is on the sidewall of therecess. At 1910, the method 1900 includes removing the layer ofdielectric material from the sidewall of the recess. At 1912, the method1900 includes forming a transistor source region in the semiconductorfin by depositing a semiconductor material in the recess. One example ofa transistor source region is the source region 144 of FIG. 8. Themethod 1900 can be suitable for forming an integrated circuit die 100other than shown in the aforementioned Figures without departing fromthe scope of the present disclosure.

In one embodiment, a method includes forming a semiconductor finincluding a channel region and an anti-punch through region, theanti-punch through region including fluorine and boron. The method canincludes forming a recess in the semiconductor fin by etching the fin,depositing a layer of dielectric material in the recess abutting theanti-punch through region, and removing a portion of the fluorine fromthe anti-punch through region performing an annealing process on thelayer of dielectric material. The method can include removing the layerof dielectric material from the recess and forming a transistor sourceregion in the recess by depositing a semiconductor material in therecess.

In one embodiment, an integrated circuit die includes a semiconductorsubstrate, a semiconductor fin protruding from the semiconductorsubstrate, and a channel region in the semiconductor fin. The integratedcircuit die 100 can include a gate dielectric positioned on the fin overthe channel region and a gate electrode positioned over the gatedielectric. The integrated circuit die can include an anti-punch throughregion in the semiconductor fin doped with a first dopant type, and asource region in the fin doped with a second dopant type opposite fromthe first dopant type. An interface between the source region and theanti-punch through region has a roughness less than 1 nm peak to valley.

The various embodiments described above can be combined to providefurther embodiments. All U.S. patent application publications and U.S.patent applications referred to in this specification and/or listed inthe Application Data Sheet are incorporated herein by reference, intheir entirety. Aspects of the embodiments can be modified, ifnecessary, to employ concepts of the various patents, applications andpublications to provide yet further embodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. An integrated circuit die, comprising: a semiconductor substrate; asemiconductor fin protruding from the semiconductor substrate; a channelregion in the semiconductor fin; a gate dielectric positioned on the finover the channel region; a gate electrode positioned over the gatedielectric; an anti-punch through region in the semiconductor fin dopedwith a first dopant type; and a source region in the semiconductor findoped with a second dopant type opposite from the first dopant type,wherein an interface between the source region and the anti-punchthrough region has a roughness less than 1 nm peak to valley.
 2. Theintegrated circuit die of claim 1, wherein the anti-punch through regionincludes boron and fluorine, wherein a concentration of fluorine in theanti-punch through region is less than 1E3/cm{circumflex over ( )}3. 3.The integrated circuit of claim 2, wherein the concentration of borongreater than 1E15/cm{circumflex over ( )}3.
 4. The integrated circuitdie of claim 1, wherein the anti-punch through region includes hydrogenand phosphorus, wherein a concentration of hydrogen in the anti-punchthrough region is less than 1E3/cm{circumflex over ( )}3.
 5. Theintegrated circuit of claim 4, wherein the concentration of borongreater than 1E15/cm{circumflex over ( )}3.
 6. The integrated circuitdie of claim 1, further comprising a drain region in the fin doped withthe second dopant type, wherein an interface between the drain regionand the anti-punch through region has a roughness less than 1 nm peak tovalley.
 7. An integrated circuit, comprising: a semiconductor substrate;a semiconductor fin on the semiconductor substrate; an n-channel FinFETtransistor including: a first anti-punch through region doped withP-type dopants in the semiconductor fin and including fluorine atomswith a concentration less than 1E3/cm{circumflex over ( )}3; a firstchannel region in the semiconductor fin on the first anti-punch throughregion; and a first source region in the semiconductor fin doped withN-type dopants and abutting the anti-punch through region.
 8. Theintegrated circuit of claim 7, wherein an interface between the firstsource region and the first anti-punch through region has a roughnessless than 1 nm peak to valley.
 9. The integrated circuit of claim 7,wherein the first anti-punch through region includes boron with aconcentration greater than 1E15/cm{circumflex over ( )}3.
 10. Theintegrated circuit of claim 7, comprising: a p-channel FinFET transistorincluding: a second anti-punch through region doped with N-type dopantsin the semiconductor fin and including hydrogen atoms with aconcentration less than 1E3/cm{circumflex over ( )}3; a second channelregion in the semiconductor fin on the second anti-punch through region;and a second source region in the semiconductor fin doped with P-typedopants and abutting the anti-punch through region.
 11. The integratedcircuit of claim 10, wherein the second anti-punch through regionincludes phosphorus with a concentration greater than 1E15/cm{circumflexover ( )}3.
 12. The integrated circuit of claim 10, wherein an interfacebetween the first source region and the first anti-punch through regionhas a roughness less than 1 nm peak to valley.
 13. The integratedcircuit of claim 10, wherein the second FinFET transistor includes adrain region in the fin doped with the P-type dopants, wherein aninterface between the drain region and the second anti-punch throughregion has a roughness less than 1 nm peak to valley.
 14. The integratedcircuit of claim 10, wherein the first FinFET transistor includes adrain region in the fin doped with the N-type dopants, wherein aninterface between the drain region and the first anti-punch throughregion has a roughness less than 1 nm peak to valley.
 15. An integratedcircuit, comprising: a semiconductor substrate; a semiconductor fin onthe semiconductor substrate; an n-channel FinFET transistor including: afirst anti-punch through region doped with P-type dopants in thesemiconductor fin; a first channel region in the semiconductor fin onthe first anti-punch through region; and a first source region in thesemiconductor fin doped with N-type dopants and abutting the anti-punchthrough region, wherein an interface between the first source region andthe first anti-punch through region has a roughness less than 1 nm peakto valley.
 16. The integrated circuit of claim 15, wherein the firstanti-punch through region includes fluorine atoms with a concentrationless than 1E3/cm{circumflex over ( )}3.
 17. The integrated circuit ofclaim 16, wherein the first anti-punch through region includes boronatoms with a concentration greater than 1E15/cm{circumflex over ( )}3.18. The integrated circuit of claim 15, comprising: a p-channel FinFETtransistor including: a second anti-punch through region doped withN-type dopants in the semiconductor fin; a second channel region in thesemiconductor fin on the second anti-punch through region; and a secondsource region in the semiconductor fin doped with P-type dopants andabutting the anti-punch through region.
 19. The integrated circuit ofclaim 18, wherein the second anti-punch through region includes hydrogenwith a concentration less than 1E3/cm{circumflex over ( )}3.
 20. Theintegrated circuit of claim 19, wherein the second anti-punch throughregion includes phosphorus with a concentration greater than1E15/cm{circumflex over ( )}3.